摘要
用波长范围为 70 0～ 3 5 0 0 nm的光电流测试系统研究了 SI-Ga As衬底及其 MESFET器件中的深能级。结果显示在 SI-Ga As衬底及其 MESFET器件中存在着相似的深能级 ,衬底的深能级影响着器件的光敏等性能。还讨论了如何减少器件中光敏现象的方法。
Deep levels of substrate and MESFET device on SI GaAs have been studied using photocurrent spectroscopic system ranging from 700nm to 3500nm.It shows that there are close relationship between the deep levels of substrate and that of MESFET device.These deep levels have effect on the photosensitivity of device.How to reduce the photosensitivity in device is also discussed.
出处
《半导体情报》
2000年第4期41-43,共3页
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