Sn掺杂CdO透明导电薄膜的制备和光电性能研究

Preparation of Sn doped CdO transparent conductive film and its photoelectric properties

通过脉冲激光法在石英玻璃基底上沉积了锡掺杂氧化镉(Sn-CdO)透明导电薄膜。X射线衍射,分光光度计和霍尔效应仪检测了薄膜的结构、光学和电学性能。结果表明Sn的掺杂提高了薄膜[111]方向的择优生长,而且促使了(200)晶面衍射角增大。Sn-CdO薄膜的光学禁带宽度随着Sn掺杂含量的增加而变宽。另外,适量的Sn掺杂可以明显改善CdO薄膜的电学性能,比如2.9 at%Sn掺杂CdO薄膜的电阻率是未掺杂薄膜的十二分之一,载流子浓度是未掺杂的十三倍。因而光学和电学性能的改良使得Sn-CdO薄膜作为透明导电材料具有重要的应用价值。

Transparent conductive tin-doped cadmium oxide （Sn-CdO） thin films with different Sn concentration were deposited on quartz glass substrates by pulse laser deposition （PLD）. The film＇s crystallographic structure, optical and electrical properties were characterized by X-ray diffraction （XRD）, UV-VIS spectrophotometer and Hall system. The results show that doping of Sn enhances the film＇s growth towards [111] prefen＇ed orientation and causes slight shift in the （200） Bragg angle towards higher value. The optical band gaps （Eg） of the Sn-doped films were found to increase with the increase of Sn doping concentration. In addition, approperiate doping of Sn can evidently improve the electrical properties of CdO films, for example, the resistivity of the CdO film with 2.9at% Sn doping is about one-twelfth of that of the undoped CdO film, while the carrier concentration is about 13 times of that of the undoped one. The improvements both in optical and electrical properties endow that the Sn-CdO thin fihns have potential application as TCO materials for different optoeleetronic device applications.