摘要
采用丝网印刷工艺制备了Pb(Zr0.9T0.1)O3(PZT)厚膜,研究了过量PbO和Bi2O3-Li2CO3共同助烧对PZT厚膜低温烧结特性、微观结构、相构成以及介电和热释电性能的影响。结果表明:随着过量PbO及Bi2O3-Li2CO3添加量的增加,PZT厚膜的烧结温度和晶粒尺寸均逐渐降低。当PbO过量6.4%(质量分数)、Bi2O3-Li2CO3添加量为5.4%(质量分数)时,PZT厚膜可在900℃低温下致密成瓷,且其热释电系数和探测率优值均得到大幅提高;所得样品在30℃时的热释电系数为10.6×10–8C.cm–2.K–1,探测率优值为8.2×10–5Pa–1/2。
Pb（Zr0.9Ti0.1）O3 thick films were prepared using the screen priming technique. The effects of excess PbO and Bi203-Li2CO3 co-doping on the low-temperature sintering behavior, microstructure, phase composition, dielectric properties and pyroelectric properties of PZT thick films were investigated. The results show that both the sintering temperature and grain size of PZT thick films decrease with the increase in the PbO and Bi203-Li2CO3 contents. When 6.4% （mass fraction） more PbO and 5.4% （mass fraction） Bi203-Li2CO3 are added, the sintering temperature of the PZT thick film is reduced to 900℃. Meanwhile, its pyroelectric coefficient and figure-of-merit are significantly enhanced, with a value of 1.06×10-8C · cm-2 · K-l and 8.2 × 10-5 Pa-1/2, respectively, at 30 ℃.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2013年第2期13-16,共4页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.51102102)
高等学校博士学科点专项科研基金资助项目(No.2011014210074)
关键词
PZT厚膜
助烧剂
丝网印刷
热释电性能
探测率优值
PZT thick film
sintering aids
screen printing
pyroelectric properties
figure-of-merit
