摘要
本文分析了影响扩散硅压力传感器稳定性产生的原理,并依据半导体理论,在工艺上采取了相应的措施。大大改善的传感器的稳定性,使我们生产的传感器稳定性达到国外同类产品的先进水平。
Reasons affecting the stability of piezoresistive pressure sensor have been analyzed. Through analysis many measurements have been adopted in the processing in terms of semiconductor theory. The stability of sensors has greatly been improved. The stability feature of sensors produced by us has caught up with advanced level of our partner in the world.
出处
《传感器世界》
2000年第8期13-16,共4页
Sensor World
关键词
压力传感器
稳定性
扩散
硅
piezoresistive pressure sensor,stability,PN junction leakage current,surface leakage current
