室温下不同偏压与掺杂浓度对非对称量子阱隧穿系数的影响

Study of Different Bias and Doping Concentration on Asymmetric Quantum-Well Tunneling Coefficients at Room Temperature

建立了非对称三势垒量子阱模型,通过对任意单势垒透射系数理论分析,模拟研究了非对称三势垒在室温下,其器件衬底掺杂,在不同浓度与不同偏压下,其透射系数随电子入射能量发生变化的曲线,并进行了分析讨论,得到了内建电场等因素制约量子阱隧穿效应的理论。

A quantum-well model is established for asyn^netric three potential barriers. Through analyzing and simulating the transmission coefficient of any single potential barrier for the asymmetric three potential barriers under the room temperature of the substrate, the different concentration doping and the different bias, the transmission coefficients versus the electron energy are discussed and the quantum well tunneling effect of the built-in electric field is obtained.