摘要
对微波单片集成 (简称 MMIC)双栅 MESFET混频器的设计理论和工艺技术进行较为细致的研究。根据双栅 MESFET的理论分析与实验结果 ,建立了一种栅压调制 I- V特性的经验模型 ,推导了双栅 FET混频器变频增益公式。分析了栅压对改变非线性跨导在混频器中的作用。最后设计并加工出了芯片面积为 0 .75 mm× 1 .5 mm Ga As MMIC双栅 FET混频器。
The design method and process technology for GaAs dual gate MESFET mixer MMIC are presented in detail. According to theory and experimental results of the dual gate FET, an empirical gate voltage controlled I V model is found, and the dual gate mixer MMIC conversion gain is derived. It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function. Finally, the GaAs dual gate FET mixer MMIC is designed and fabricated on 0.75 mm×1.5 mm chip.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2000年第2期128-134,共7页
Research & Progress of SSE
基金
中国科学院重点项目资助
