摘要
建立了适用于缓变 Alx Ga0 .5 2 -x In0 .48P/Ga As HBT的解析模型。考虑了 Al组分 x的变化对 HBT温度特性的影响。分析结果表明 ,在实用的电流范围 (Jc在 1 0 3 A/cm2 左右 )内 ,Alx Ga0 .5 2 -xIn0 .48P/Ga As HBT随着 x的增大 ,其电流增益的稳定性也上升 ,当 x=0 .3时工作温度可超过 70 0K。文章还分析了高温时
An analytical model for graded Al x Ga 0.52 x In 0.48 P/GaAs HBTs is established. The model has taken into account the effects of Al composition x on the temperature properties of HBTs. The results of theoretic calculation show that in the practical range of current density ( J c is around 10 3A/cm 2), the temperature stability of Al x Ga 0.52 x In 0.48 P/GaAs HBTs' current gain increases with x . When x =0.3, the maximum operable temperature can exceed 700 K. The reason for the reduction in current gain of HBTs at high temperature is also discussed.
出处
《固体电子学研究与进展》
CSCD
北大核心
2000年第2期135-143,共9页
Research & Progress of SSE
基金
国家自然科学基金资助项目
上海应用材料研究与发展基金项目!(编号 :6 9576 0 53)