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Al_xGa_(0.52-x)In_(0.48)P/GaAs异质结双极晶体管高温特性的计算分析

Analysis on High Temperature Characteristics of Al_xGa_(0.52-x)In_(0.48) P/GaAs HBTs
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摘要 建立了适用于缓变 Alx Ga0 .5 2 -x In0 .48P/Ga As HBT的解析模型。考虑了 Al组分 x的变化对 HBT温度特性的影响。分析结果表明 ,在实用的电流范围 (Jc在 1 0 3 A/cm2 左右 )内 ,Alx Ga0 .5 2 -xIn0 .48P/Ga As HBT随着 x的增大 ,其电流增益的稳定性也上升 ,当 x=0 .3时工作温度可超过 70 0K。文章还分析了高温时 An analytical model for graded Al x Ga 0.52 x In 0.48 P/GaAs HBTs is established. The model has taken into account the effects of Al composition x on the temperature properties of HBTs. The results of theoretic calculation show that in the practical range of current density ( J c is around 10 3A/cm 2), the temperature stability of Al x Ga 0.52 x In 0.48 P/GaAs HBTs' current gain increases with x . When x =0.3, the maximum operable temperature can exceed 700 K. The reason for the reduction in current gain of HBTs at high temperature is also discussed.
出处 《固体电子学研究与进展》 CSCD 北大核心 2000年第2期135-143,共9页 Research & Progress of SSE
基金 国家自然科学基金资助项目 上海应用材料研究与发展基金项目!(编号 :6 9576 0 53)
关键词 异质结 双极型晶体管 高温特性 砷化镓 HBTs high temperature characteristics current gain
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参考文献1

  • 1H. C. Kuo,J. M. Kuo,Y. C. Wang,C. H. Lin,H. Chen,G. E. Stillman. Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy[J] 1997,Journal of Electronic Materials(8):944~948

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