摘要
通过作者最近建立的关于 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了 GAT的基区穿通电压 VPI,并且解释了该器件实现高频率与高电压兼容的实验结果。
By the aid of the two dimensional analytical model of the electric potential and field distribution in GATs collector depletion space in a cut off state which was established by the writers lately,the GATs base region punchthrough voltage V PI was investigated quantitatively,and the experimental results which concluded that the GATs can realize the compatibility between high frequency and high voltage were explained.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2000年第2期190-194,共5页
Research & Progress of SSE
基金
国家自然科学基金!( No.6 9896 2 6 0 - 0 6 )
国家高技术研究发展计划!( 86 3- 715- 0 10 )
