宽势阱半导体光电器件研究

Research of the Wide Barrier Photoelectric Device

设计了一种新型宽势阱光电探测器件。介绍了该器件的结构形式、电流传输机制以及隧道效应和偏压对器件光探测灵敏度的影响。当器件光敏面积为 4 mm2 时 ,在光源测试条件为 :2 856 ,1 90 0 0 lx下 ,光电流达 0 .6 m A,加 1 .5 V反偏时达 2 4 m A,灵敏度分别为 2 .9A/ W及1 1 9A/ W。

A new wide barrier photoelectric device and its structure are described. The current transport mechanism and the influences of tunnel effect and bias to the device photo sensitivity are analyzed. With 4 mm 2 sensitive area of deveice, under 2 856 , 19 000 lx illumination, the photo current reaches 0.6 mA, and reaches 24 mA when applying 15 V of reverse bias, hereby the sensitivity is corresponding to 2.9 A/W and 119 A/W respectively.