短周期AlGaAs/GaAs超晶格的MOCVD生长及X射线衍射研究

MOCVD Growth and X-ray Diffraction Studies of Short Period AlGaAs/GaAs Superlattices

生长了短周期 Al Ga As/ Ga As超晶格 ,并通过双晶 X射线衍射谱 ,对 MOCVD超薄层Al Ga As、Ga As的生长进行了研究。从衍射谱卫星峰的级数及 Pendellosong干涉条纹的出现 ,定性地对晶格结构及界面作出评价。 X光衍射测量结果与 HEMT结构电学性能测试结果有较好的对应关系。

Short period AlGaAs/GaAs superlatices were grown by MOCVD.Double crystal X ray diffraction was used to study the characteristic of very thin AlGaAs and GaAs layers.The qualities of crystal lattice and interface were evaluated by the orders of satellite peaks and appearance of Pendellsong interference stripe.The results of X-ray diffraction agree with the HEMT feature.