摘要
本文报道了γ射线辐照对量子阱红外探测器性能的影响．γ射线的辐射剂量分别为1mrad、6mrad、16mrad．测量了器件在不同γ辐照剂量下的光谱响应、暗电流、黑体响应率．通过对实验结果的分析，暗电流和黑体响应率随γ辐照剂量增加而递减，表明探测器的性能随γ射线辐照剂量的增加而逐步衰减．
This paper reports the effects of high energy gamma irradiation on the performance of QWIP. The dose ranged from 1 mrads to 16 mrads. The dark current and spectral response of these radiated devices were measured at different dose levels. The detcctor performance becomes worse with increasing dose.
出处
《量子电子学报》
CAS
CSCD
2000年第3期265-268,共4页
Chinese Journal of Quantum Electronics
关键词
多量子阱
红外探测器
Γ射线辐照
砷化镓
multiple quantum well, infrared photodetector, gamma irradiation
