温度和剂量率对NMOS器件迁移率的影响

Effects of T emperature and Dose Rates on Mobility of NMOS Devices

对加固型 CC40 0 7NMOS器件进行了低温 ( - 30°C)和室温 ( 2 5°C) γ射线辐射实验、不同剂量率下的γ辐射实验以及不同温度下的退火实验。根据实验结果 ,利用归一化迁移率与界面态电荷的机理模型 ,分析了辐射环境温度、辐射剂量率以及退火温度对 NMOS器件迁移率的影响。

A series o f experiments are performed on γ —ray ir radiation of NMOS devices for different dose rates at -30 °C and 25 °C, and post -irradiation annealing at 100 °C and 25 °C Based on the experimental results, e ffects of radiation environment, dose ra tes and annealing temperatures on the st ability of NMOS device are analyzed usin g the mechanism model for normalized mob ility and radiation-induced interface-st ate charge