石墨烯的化学气相沉积生长与过程工程学研究

CVD process engineering for designed growth of graphene

石墨烯作为由sp2杂化的碳原子键合而成的二维原子晶体,其独特的能带结构和优良的电学、热学和力学性质一直吸引着人们的广泛关注,并有望在未来的半导体工业中得到实际应用.然而,高质量石墨烯的大规模可控制备仍然存在着诸多挑战性的问题,也是石墨烯工业化应用的瓶颈所在.化学气相沉积(CVD)技术在大面积生长高质量石墨烯方面拥有独特的优势,已成为石墨烯生长领域的主流技术.我们近年来一直致力于发展石墨烯的CVD生长方法,通过对表面催化生长的基元步骤的设计与控制,实现了对石墨烯的结构和层数的有效调控,并形成了CVD生长的过程工程学指导思想.本文从对石墨烯的CVD生长机理的分析入手,系统介绍了我们开展的过程工程学研究,并对该领域的未来发展趋势以及所面临的机遇和挑战进行了简要的展望.

Graphene, the two-dimensional network of sp2-hybridized carbon atoms, has attracted worldwide interest because of its unique energy band structure as well as its outstanding electronic, thermal and mechanical properties. The extremely high carrier mobility in graphene provides a great potential for next-generation ultrafast graphene-based electronic devices. One of the bottle-neck challenges for graphene electronics is the controlled growth of high-quality graphene. Among the typical techniques reported for graphene production, chemical vapor deposition （CVD） has been paid particular attention for its reliability and facile access to highly-crystalline and large-area graphene. We are working on controlled CVD growth of graphene following a concept of process engineering. Our general strategy is to design and control the elementary steps of catalytic CVD process for achieving a precise control over layer thickness, stacking order, domain size, doping and energy band structure. In this paper, we will show a few typical examples to demonstrate such kinds of process engineering for the designed growth of graphene together with a brief discussion on the future directions, challenges and opporttmities in this fascinating research area.