硅场致发射特性的数值模拟

Numerical Simulation of Field Emission of Silicon Cathode

用数值方法求解漂移 扩散模型下半导体基本方程组以及耦合的场致发射方程 ,对硅的场致发射特性进行数值模拟 ,模型中包含以往输运方程模型中未考虑的碰撞电离现象 .模拟结果表明 ,当发射电流较大时 ,硅场致发射主要受体内电子向发射表面输运过程的限制 ,碰撞电离现象对输运过程有显著地影响 .

The basic equations of semiconductor are solved numerically for simulating the field emission of silicon cathode that may be affected by electron transportation. Use are made of the extended drift diffusion model and coupled field emission equation. Impact ionization is found to play an important role. The study led to a better understanding of the internal state of a silicon emitter.