非晶SiH_xO_y薄膜的强可见荧光

Strong Visible Photoluminescence from α-SiH_xO_y Thin Films

采用 PECVD方法制备了非晶 Si Hx Oy 薄膜 ,室温下观察到了性能稳定的强荧光发射现象 ,其中3 65nm、4 70 nm、73 0 nm三个带由分立能级的荧光峰组成 ,说明这些荧光带起源于氧有关的能级。

SiHxOythin films were deposited by PECVD thchnique,Strong visible photoluminescence bands and the peaks centered at365,470nm,730nm were observed from asprepared samples at room temperature. Experimental results show that PL bands and peaks are related to the oxygen defect levels. The possible origin and variation of PL bands and peaks were discussed according to the level mode.