共溅射Ni_xZn_(1-x)O薄膜的结构、磁性和电性能

Structure,Magnetic and Electrical Properties of Ni_xZn_(1-x)O Co-sputtering Films

采用射频共溅射方法制备了NixZn1-xO(x=0.78、0.72、0.68)薄膜。薄膜有非晶相和少量的NiO结晶相的存在。样品都具有明显的室温铁磁性,退火后(TA=803 K)Ni0.78Zn0.22O薄膜的饱和磁化强度Ms可达65 emu/cm3,对应单个Ni离子磁矩大于0.13μB。低温下制备态薄膜都出现了电阻率极小值的现象,这是由于样品发生了金属-绝缘体转变。

The Nix Zn1-x O（x = 0. 78 ,0. 72,0. 68 ）films were fabricated by RF co-sputtering method. The samples presenced amorphous phase and a small amount of NiO crystalline phase. The samples had manifest ferromagnetism at room temperature. The saturation magnetization Ms of Ni0.78 Zn0.22 O film reached to 65 emu/cm3 after annealed （TA = 803 K）, corresponding to a single Ni ion magnetic moment greater than 0. 13 μB- Due to metal-insulator transitions, the as-sputtered films appeared resistivity minimum phenomenon at low-temperature.