摘要
对金属 -铁电体 -半导体场效应晶体管器件而言 ,具有六方晶系结构的稀土锰酸盐 ( Re Mn O3)是性能优良的薄膜材料 ,它们的介电常数低 ,仅仅只有单一的极化轴 ,没有挥发性的元素 Pb、Bi等。本文作者对 Re Mn O3材料的结构特征、制备方法及其铁电性能等进行了介绍 ,并指出存在的困难及其发展方向。
For MFS(metal ferroelectric semiconductor)transistor devices,the hexagonal Re MnO 3( Re :rare earth elements)thin films are believed to be an excellent materials,because they have only one polarization axis,do not contain volatile elements such as Bi and Pb and have low dielectric permittivity.This paper reviews structural characteristics of the Re MnO 3 materials, Re MnO 3 thin films deposition and its ferroelectric characteristics.The current difficultes and developing trend in this field are also introduced.
出处
《压电与声光》
CSCD
北大核心
2000年第3期186-189,共4页
Piezoelectrics & Acoustooptics
基金
华中理工大学青年基金资助项目
关键词
稀土锰酸盐薄膜
场效应晶体管
铁电
Re-MnO_3 thin film
nonvolatile ferroelectric memory
metal-ferroelectric-semiconductor(MFS)
thin film deposition
ferroelectric thin film characteristic