HgCdTe固态再结晶技术工艺改进

Improvement on solid\|state recrystallization technique of HgCdTe

HgCdTe固态再结晶技术主要包括合成 -淬火 -退火三个过程 ,文中对其中的合成工艺和淬火工艺进行改进 ,获得了较为满意的结果。用这种方法制备的HgCdTe材料单晶大、组份均匀、结构完整、电学参数好 ,并已做出多种高性能红外探测器。

Solid\|state recrystallization technique of HgCdTe contains three steps: compounding, quenching and annealing. In this paper, the techniques of compounding and quenching are improved and the results are satisfactory. HgCdTe crystals grown by this method are of large grain size, uniform composition, perfect crystal structure and excellent electrical characteristics, and many kinds of infrared detector have been made by these crystals.