表观电化学参数对铝箔交流电侵蚀的影响

Effect of J/CiT on AC etching of aluminum foil for capacitors.

改变交流电密度 (J)、电解液温度 (T)及盐酸浓度 (ci)侵蚀电容器铝箔 ,并以表观电化学参数(J/ ci T)为依据 ,通过侵蚀铝箔的表面形貌和侵蚀箔比容的变化规律 ,研究了铝箔在纯盐酸中受〔Cl- 〕和〔H+ 〕影响的交流侵蚀机制。

ELECTRONIC COMPONENTS & MATERIALS (China), Vol 19, No 3, P 33 34 (Jun 2000) In Chinese The A C etching experiments are made on Al HCl system under various temperatures, etching current and concentration of HCl. Specific capacitance is measured, SEM photograph made, and electric potential variation of aluminum foil relative to Ag/AgCl counter electrode during etching recorded. Through analysis of experiment results, A [Cl -] and [H +] jointly controlled A C etching model is founded according to J/CiT, (where J is etching current density[0 000 1 A/cm 2], Ci the concentration of HCl[mol/L], T temperature of etching system[Kelvin scale]).(8 refs.)