低能离子注入对Cu_xS薄膜组分的影响

Modification of Cu_xS Thin Films by Low Energy Ion Beam Implantation

采用N^+离子注入的方法 ,对气—固化学反应生成的CuxS薄膜进行了掺杂 ,研究了N+离子注入能量和剂量对Cu_xS薄膜组分的影响。结果表明 ,离子注入改变了CuxS薄膜铜与硫的比例 ,使薄膜组分更接近于富铜型 ,样品的X射线衍射图谱和透射光谱研究进一步证实了这种结构转变的存在。

Cu_xS thin-films are implanted by low energy N + ion beam. The effect of the energy and dose of N + ion implantation on Cu_xS films is investigated. The results show that the ratio of copper and sulfur increases to some extent, the constituents of the film turn from rich sulfurous phase to rich copper phase after ion beam irradiation. X-ray diffraction spectrum and optical transmission spectra of the sample confirmed the results.