摘要
采用电化学方法在铜衬底上制备CuxS薄膜 ,在一定反应温度、电压、时间条件下 ,作为电极的铜片衬底可生成一层深蓝色的质地均匀的CuxS薄膜。实验发现 ,生成的CuxS薄膜主要成分为Cu2 S ,具有良好的半导体性质 ,且其电导率与薄膜退火温度有很大关系。通过XRD、SED等方法对样品的组织结构、光电性能进行了研究。
Thin films of copper sulfide have been prepared by electrochemical method at some temperature, voltage and time. The Cu xS thin films grown on the copper substrate which is a electrode as positive pole in the electrochemical reaction, and its color is deep blue. It is found that Cu xS films have characteristics of semiconductor and its conductivety of highly related to temperature of sample annealing in the experiment. The composition, the structure and the photoelectricity of Cu xS thin film are investigated by using XRD、SED, etc.
关键词
电化学沉积
硫化铜薄膜
光电性
Electrochemical deposition
Cu_xS thin film
photoelectricity.
