GaAs抛光片腐蚀过程初步研究

Primary Study of Etching Process for Polished GaAs Wafers

采用X射线衍射、X射线双晶衍射和X射线荧光三种手段对经H2 SO4 :H2 O2 :H2 O =16 :1:1和 3:1:1腐蚀液 ,在不同腐蚀条件下得到的GaAs片子进行近表层结晶完整性、片子表面的残留产物以及发射二次X射线情况测量 ,并初步分析了这些数据。

The studied wafers were etched by H 2SO 4:H 2O 2:H 2O=16:1:1 or 3:1:1 at proper temperature. The near surface crystal perfection, the residual substance at the surface of the wafers after etching, and the secondary X-ray emission were measured by DCXRD, XRD and XRF respectively. A primary analysis was given.