摘要
采用光刻工艺和纳米引晶技术 ,在抛光的单晶 Si衬底上形成带有超细金刚石纳米粉的引晶图案 ,并利用引晶处与抛光 Si处金刚石成核密度的巨大差异 ,在光滑的 Si3N4 和 Mo衬底上实现金刚石薄膜的高选择性生长 .
A novel process has been proposed to grow the polycrystalline diamond film selectively by selectively seeding with the diamond powder of 5 nm average size. A high selectivity was achieved in the process, which had an advantage over the conventional SAD method. The process requires only a few steps and avoids the surface defects in the routine process. Moreover, the diamond films were selectively grown on Si 3N 4 and Mo substrates by the new method.
出处
《吉林大学自然科学学报》
CAS
CSCD
2000年第3期61-64,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
基金
国家自然科学基金! (批准号 :5 963 10 60和 695 760 12 )
关键词
纳米引晶
金刚石薄膜
选择性生长
seeding with nanocrystalline diamond powder
diamond film
selective growth