CdSe量子点/PVK复合电双稳器件的制备及载流子输运性能研究

Fabrication of Hybrid Bi-Stable Device Based on CdSe Quantum Dots/Poly(N-Vinylecarbasole) Composite and Its Carrier Transport

报道一种基于CdSe量子点/聚乙烯基咔唑有机无机复合电双稳器件,通过对量子点浓度的控制使器件在室温下可以通过正向偏压和负向偏压脉冲激励下实现高阻态与低阻态的相互转变,相当于存储器件的写入功能与擦除功能,并且可实现重复的"读-擦-读-写"操作。对电流-电压曲线和电容-电压曲线展开讨论,验证器件的载流子捕获与释放机制,阐述载流子在该器件的输运机制。

A novel type of the organic/inorganic hybrid bi-stable device has been successfully fabricated with the CdSe quantum dots（QDs） embedded in poly（N-vinylecarbasole）（PVK） as the nano-composite material.In the newly-developed device,the reversible transition between the high and low resistance states,corresponding to the write and erase processes of a digital memory device,can be realized at room temperature by applying a positive and/or negative pulsed bias.Moreover,the device has survived the high repetition of read-erase-read-write tests.The current-voltage and capacitance-voltage characteristics of the device were evaluated to understand the possible mechanisms responsible for the capture and release of the carriers in reversible transitions.