GaP:N液相外延材料发光区域的荧光测量

Fluorescence Experiment of GaP:N LPE Material L ight-Emitting Region

通过磨斜角 ,用光致发光法测量了 Ga P:N液相外延 (L PE)材料中 n区和 p区的发光强度。从被测点的荧光谱中可以看出 ,n区和 p区均为发光区域 ,但是在 p- n结两侧氮 (N)浓度大致相同的情况下 ,p区的发光强度明显高于 n区的发光强度 ,约为 n区发光强度的 3～ 5倍。此实验结果表明 ,在 p、n结附近杂质浓度较低情况下 ,Ga P:N绿色发光外延材料中的发光区域主要是在 p区。

By measuring photoluminescence spectra of each point along the slope of several polished Ga P:N green light emitting liquid phase epitary ( LPE) slices,the photolumi- nescence intensities of p- and n- type crystals are compared,itis found when nitrogen concen- tration is equal on two sides of p- n junction approximately,the main luminescence region is p- type region,though there is also light emitting from n- type region.The photolumi- nescence intensities in the former region are about3to5 times of that in the latter region.