呼之欲出的新一代MOS栅极电介质材料

PROMISING NEXT GENERATION DIELECTRIC MATERIALS FOR MOS GATES

传统的SiO2 栅极电介质材料无法克服MOS器件特征尺度缩小带来的量子隧穿效应的影响 .作为进一步提高微电子器件集成度的途径 ,利用新一代具有高介电常数的栅极电介质材料取代SiO2 的研究工作已经展开 .文中介绍了此类材料抑制隧穿效应影响的原理和其应当满足的各项性能指标 .并对目前几种主要的研究方案 ,如几种高介电常数金属氧化物、硅酸盐及其迭层结构的研究状况和优缺点给予了简要评述 .

Traditional SiO\-2 gate dielectric materials fail to overcome the influence brought on by the quantum\|mechanical tunneling\|effect,which is induced by the scaling down of the MOSFET.As an essential approach to continue the scaling down in size of microelectronic devices,efforts to replace SiO\-2 by next\|generation dielectric materials with high dielectric constant( K ) are underway.The principle of these so\|called“high K materials” to restrain the influence of the tunneling effect and other demands of performance are described.Several present projects on high K materials such as high K metal oxides or their stack structures with SiO\-2 and SiN,and high K metal silicates,as well as their respective demerits and virtues are reviewed.