用低能离子溅射剥层和高能离子背散射组合方法进行薄膜原位分析

IN SITU ANALYSIS OF HIGH ENERGETIC ION RBS COMBINED WITH LOW ENERGETIC ION SPUTTERING FOR THIN FILMS 

介绍了将离子枪组合于卢瑟福背散射分析靶室中构成Ｓｐｕｔｔｅｒｉｎｇ／ＲＢＳ原位分析实验装置，用低能离子溅射剥层与高能离子背散射组合对薄膜样品进行成分和深埋层分析方法．给出了对样品分析的三个例子．对Ａｕ／Ｓｉ 样品的分析着重讨论了Ａｕ 在Ａｒ＋ 溅射剥层时的溅射速率；对Ｓｉ／ＧｅＳｉ／Ｓｉ 和ＷＳｉｘ／ＳｉＯ２／Ｓｉ 样品的深埋层分析，提高了样品分析的深度分辨率．

With an experimental system composed of an ion gun and a RBS analysis chamber,in situ analysis of low energetic ion sputtering and high energetic ion RBS for thin films is carried out.We analyze,for three kinds of samples,their compositions and deeply\|buried layers.In the analysis of Au/Si sample,the sputtering rate of Au with Ar\++ etching is discussed and in the analysis of deeply\|buried layers of Si/Ge\|Si/Si and WSi\- x /SiO\-2/Si samples,the depth resolution is obviously improved.The advantages and disadvantages of this analytical method in thin film studies,as well as its potential applications,are discussed.