400nm高性能紫光LED的制作与表征(英文)

Fabrication of High-performance 400nm Violet Light Emitting Diode

利用金属有机物化学气相沉积技术在蓝宝石衬底表面制备了带有p-AlGaN电子阻挡层的400 nm高性能紫光InGaN多量子阱发光二极管。制作了3种紫光LED,分别带有不同p-AlGaN电子阻挡层结构:Al摩尔分数为9%的p-AlGaN电子阻挡层;Al摩尔分数为11%的p-AlGaN电子阻挡层;Al摩尔分数为20%的10对p-AlGaN/GaN超晶格电子阻挡层。带有高浓度Al电子阻挡层的紫光LED的光输出功率高于低浓度Al电子阻挡层的紫光LED。带有10对p-AlGaN/GaN超晶格电子阻挡层的紫光LED的光输出功率获得了极大的提高,在20 mA注入电流时测试得到的光输出功率为21 mW。此外,该LED同时显示了在高注入电流下接近线性的I-L特性曲线和在LED芯片表面均匀的发光强度分布。

High-performance 400 nm violet InGaN multi-quantum-wells light-emitting diodes（LED） with p-AlGaN electron blocking layer were fabricated on sapphire substrate by metal organic chemical vapor deposition technique.Different kinds of p-AlGaN electron blocking layers were grown in three violet LEDs： bulk p-AlGaN with Al mole fraction of 9%,bulk p-AlGaN with Al mole fraction of 11% and super lattice p-AlGaN/GaN with Al mole fraction of 20%.The output power of violet LED with bulk p-AlGaN（11%） is higher than the LED with bulk p-AlGaN（9%）.Typically,the output power of the LED with 10 pairs of p-AlGaN/GaN super lattice electron blocking layer has been greatly improved.A LED with an output power of 21 mW at an injection current of 20 mA is achieved.In additional,the LED also shows an almost linear I-L characteristics at high injection current and uniform intensity mapping on LED chip surface.