摘要
We report the studies of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors(MISHEMTs) using reactive-sputtered La2O3 as the gate dielectric and the surface passivation layer.The device presents a maximum drain current of 829 mA/mm and a maximum transconductance of 105 mS/mm,while the gate leakage current in the reverse direction is reduced by two orders of magnitude and the forward gate voltage swing increased to +5 V without gate breakdown.Compared to HEMT devices of similar geometry,MISHEMTs present a significant drain current recovery form current collapse.
We report the studies of AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors （MISHEMTs） using re- active-sputtered La203 as the gate dielectric and the surface passivation layer. The device presents a maximum drain current of 829 mA/mm and a maximum transconductance of 105 mS/ram, while the gate leakage current in the reverse direction is re- duced by two orders of magnitude and the forward gate voltage swing increased to ＋5 V without gate breakdown. Compared to HEMT devices of similar geometry, MISHEMTs present a significant drain current recovery form current co/lapse.
