非晶态铁硼薄膜的平面霍耳效应

THE PLANAR HALL EFFECT IN AMORPHOUS Fe_(83)B_(17) THIN FILM

对于用射频溅射法制得的Fe_(83)B_(17)薄膜进行了平面霍耳效应的研究。实验表明:厚度大于800(?)的薄膜测量结果与导出的公式符合良好,且平面霍耳电压V_H的磁滞回线有轴对称性,但对较薄的膜则出现对公式的偏离并失去对称性。V_H的幅值可达500μV,开关临界磁场为22×10^(-4)T,晶化以后薄膜的V_H减小约一个数量级。利用平面霍耳效应测量了薄膜的静态磁特性。

The amorphous Fe83B17 thin films prepared by means of radio frequency sputtering is used in the planar Hall effect study. The experiments show that for the films thicker than 800 A the result is in good agreement with the deduced formulas, while for the thinner films there appear deviations from the formulas. The amplitude of the planar Hall tension VH can be up to 500μV, the critical magnetic field for switching is 22× 10-4T. It is found that the VH for the amorphous is much larger than that for the crystalline of the same component. By using the planar Hall effect, the static magnetic characteristics of the films has been measured.