摘要
文章采用M/A COM公司的MA4E2037肖特基势垒二极管,设计了一种V波段高中频混频器。为了实现高中频(33GHz),设计了一个90°三分支定向耦合器用来输入本振信号和输出中频信号,在射频输入端,采用了低插入损耗的E面探针波导-微带转换过渡。通过优化匹配电路的参数,仿真结果显示变频损耗在58GHz～62GHz,范围内小于21dB,幅度平坦度小于2dB。
The design of a V band mixer with high IF frequency is described, using commercially available GaAs Schot- tky barrier diode MA4E2037. In order to realize required high IF frequency band, a three branch directional coupler is used for the input of LO and output of IF signals, and an E-plane probe waveguide-to-microstrip transition with low insertion loss is used for the input of RF signal. With optimization of parameters of the matching network, the simulation results indicate that the mixer achieves a double side band （DSB） conversion gain greater than-21 dB and gain flatness less than 2dB in the band 58-62 GHz.
出处
《空间电子技术》
2012年第4期85-89,共5页
Space Electronic Technology
关键词
V波段
高中频
三分支定向耦合器
E面探针
V band
High IF frequency
Three branch directional coupler
E-plane probe
