摘要
采用金属等离子体基离子注入的方法,在 Ag基体上注入了 Al.用 X射线光电子能谱仪(XPS)对注入层的 Al浓度一深度分布和化学态进行了分析.用x射线衍射法(XRD)对注入层和非平衡磁控溅射的则沉积层相组成进行了测定和比较,选用小掠射角(3°)XRD对注入层的相组成进行了测定.结果表明,注入层中 Al浓度沿深度方向逐渐降低,表面有 Ag原子存在;近表面处形成了 Ag-Al固溶体并且出现了少量的 μ-Ag3Al相;较深处有氧化铝的形成,出现 Ag—Al固溶体、 μ—Ag3Al相和氧化铝三相共存;更深处, Al含量很快下降, Ag-Al固溶体消失,出现μP-Ag3Al相和氧化铝共存 μ-Ag3Al相为β-Mn复杂立方结构,可以在很宽的 Al含量范围内形成,而 Al沉积层中未出现
Al particles were implanted into Ag substrate by plasma based ion implantation with Al plasma (AIPBII). The depth profile and chemical state of Al in implantation layer were acquired by XPS. The phase composition of Al implantation layer and that of Al deposition layer by unbalance magnetron sputtering (UBMS) were determined and compared. The glanced X-ray distraction method (GXRD) was used to analysis the phase in the implantation layer in detail. The results showed the Al concentration along depth direction decreases gradually. Ag atoms can be found in the surface layer of implantation sample. The Ag-Al solid solution and a few μ-Ag3Al phase exist in this surface layer. In the deep layer of implanted sample aluminum oxide was found and coexists with Ag-Al solid solution and μ-Ag3Al. The Ag-Al solid solution disappears at the deeper layer when the Al concentration decreased rapidly, and μ-Ag3Al coexists with aluminum oxide. Ag3AI phase has β-Mn complex cubic structure and the Al concentration in Ag3AI phase fluctuates in a large range. No Ag3AI phase was found in the deposition layer of Al.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第8期805-808,共4页
Acta Metallurgica Sinica
关键词
等离了体基离子注入
纯银
铝层
相分析
metal plasma, plasma based ion implantation, Ag, XPS, glancing X-ray diffraction