摘要
采用正交试验方法,研究了碱性氯化铜蚀刻液中(Cu2+)、(Cl-)、pH值、及蚀刻液温度对铜箔蚀刻速率的影响规律。结果表明:在因素水平范围内,对蚀刻速率影响的大小顺序为蚀刻液温度>Cu2+浓度>pH值>Cl-浓度,最佳蚀刻工艺条件为(Cu2+)=100g/L,(Cl-)=120g/L,pH=8.5,T=50℃,静态蚀刻速率可达8.76 m/min。
Using orthogonal experiment, the effects of (Cu2+), (Cl-), pH value and etching solution temperature in alkaline copper chloride solution influencing etching rate were studied. The results show that the sequence of influencing etching rate are etching solution temperature, (Cu2+), (Cl-) and pH, in the range of the factors. The optimal etching process conditions are (Cu2+)=100g/L, (Cl-)=120g/L, pH=8.5, T=50℃and the rate of static etching is up to 8.76μm/min.
出处
《印制电路信息》
2013年第2期18-20,共3页
Printed Circuit Information
关键词
正交试验
碱性蚀刻液
氯化铜
蚀刻速率
影响因素
Orthogonal Experiment
Alkaline Etching Solution
CuCI2
Etching Rate
Influencing Factors