摘要
提出一种以SiGe HBT为有源器件的超宽带有源可调衰减器。在超宽频带内实现了宽增益调节范围和高线性度。详细分析了有源衰减器的最小插入损耗及最大衰减量,基于Jazz 0.35μm SiGe HBT工艺,通过选择合适的SiGe HBT有源器件,完成了超宽带有源可调衰减器的设计。利用安捷伦公司的ADS仿真软件,对设计的有源可调衰减器进行仿真验证。结果表明,在3.1~10.6GHz的超宽带内,当电压在0.4~1.8V的范围内变化时,该有源可调衰减器的增益动态范围大于50dB,S11在整个电压变化范围内均低于-10dB,且输入3阶交调点(IIP3)为13dBm。
An ultra-wide band(UWB) active attenuator with SiGe HBTs as active devices was proposed,which achieved wide gain dynamic range and high linearity in UWB.The minimum insertion loss(IL) and maximum attenuation of the active attenuator was analyzed in detail.Based on 0.35 μm SiGe HBT process,an ultra-wideband(3.1-10.6 GHz) active variable attenuator was designed by choosing proper SiGe HBTs.The active variable attenuator was simulated and verified using Agilent ADS design kit.Results indicated that the circuit achieved a gain dynamic range over 50 dB,an S11 lower than-10 dB,and an input 3rd-order intercept point(IIP3) of 13 dBm with voltage changing from 0.4 V to 1.8 V in the frequency band from 3.1 GHz to 10.6 GHz.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第1期10-13,共4页
Microelectronics
基金
模拟集成电路重点实验室基金资助项目(51439010804QT0101)
国家自然科学基金资助项目(60776051
61006044
61006059)
北京市自然科学基金资助项目(4082007)
北京市教委科技发展计划项目(KM200710005015
KM200910005001)
北京市人才强教深化计划-服务北京创新人才培养项目(0020005412A001)
北京市优秀跨世纪人才基金资助项目(67002013200301)
北京市教委科技发展计划项目(KM200710005015)