基于DICE结构的主-从型抗辐照触发器设计

Design of Radiation Hardened Master-Slave Type Flip-Flop Based on DICE

基于双互锁存储单元(DICE)结构,采用TSMC 0.18μm体硅CMOS工艺,设计了一个带复位和清零端的主-从型抗辐照触发器。通过将数据存放在不同的节点以及电路的恢复机制,使单个存储节点具有抗单粒子翻转的能力。采用多种改进设计,增强抗单粒子瞬态脉冲(singleevent transient,SET)的能力,并且降低了电路功耗。通过Spectre仿真,测试了触发器的抗单粒子翻转(single event upset,SEU)能力,确定了版图设计规则。采用新颖的3倍高度的版图布置及环栅NMOS结构,消除了总剂量效应;采用双保护环,降低了单粒子闩锁效应;最终完成了全方位抗辐照的触发器电路设计。

A radiation hardened master-slave type flip-flop with PRE and CLR option based on dual interlocked storage cell（DICE） was designed using TSMC 0.18 μm bulk CMOS technology.Single event upset（SEU） immunity was achieved by storing data on different nodes and through recovery mechanism of the circuit.Improvements on the flip-flop greatly reduced power consumption and enhanced single event transient（SET） immunity.SEU of the circuit was simulated using Spectre.Advices for layout design about single event effect hardening were presented.The flip-flop was fully radiation hardened by using novel triple-height layout arrangement and all-around gate NMOS transistor to avoid total dose radiation effects,and adding double guard ring to avoid single event latch-up（SEL）.