一种SiGe BiCMOS高速PNP器件的设计

Design of High Speed PNP Transistor for SiGe BiCMOS Process

设计了一种适用于SiGe BiCMOS工艺的低成本、高性能垂直结构PNP器件。基于仿真结果,比较了不同发射区和基区制作方法对器件特性的影响。在确定器件结构和制作工艺的基础上,进一步优化了器件特性。基于仿真得到的工艺条件所制作的PNP器件,其特性与仿真结果基本一致。最终优化的PNP器件的电流增益为38,击穿电压大于7V,特征频率为10GHz。该PNP晶体管改善了横向寄生硅基区PNP晶体管的性能,减少了垂直SiGe基区PNP晶体管工艺的复杂性,采用成本低廉的简单工艺实现了优良的器件性能。

A low cost and high performance vertical PNP transistor for SiGe BiCMOS process was designed.Effects of different emitter and base designs on device characteristics were compared against simulation results.Performance of the PNP transistor was further improved on the finalized device design and best guess process by simulation.The PNP transistor fabricated in simulated process conditions showed consistent performance with simulation.The optimized PNP device had a current gain of 38,a breakdown voltage greater than 7 V,and a transit frequency up to 10 GHz.This PNP transistor achieved excellent performance with simple and low-cost process,by improving performance of parasitic lateral PNP transistors and reducing process complexity of vertical SiGe PNP transistors.