摘要
采用三维全波电磁场模拟软件HFSS作为分析工具,对八边形差分对称结构电感和单端结构电感进行对比研究,提出利用多层金属并联布线、渐变线宽和图案接地屏蔽(PGS)等结构与差分对称结构集成来提高片上电感性能的设计方案。此方案能与标准硅基CMOS工艺兼容。仿真结果表明,该方案能有效提高集成电感的Q值。
A comparative study was made on octagonal integrated inductor with differential symmetric structure and single-ended inductor using 3D full-wave electromagnetic simulation software HFSS.A design scheme was proposed to improve the performance of integrated inductor by integrating multilayer parallel wiring,tapered metal width and PGS structure with differential symmetric structure.Simulation results showed that those schemes,which were compatible with standard Si CMOS process,could improve the quality factor of integrated inductors effectively.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第1期107-110,114,共5页
Microelectronics
基金
湖北省教育厅科研计划资助重点项目(D20102026)
襄樊学院科研项目资助(2010YA019)
关键词
集成电感
品质因数
差分对称
渐变线宽
图案接地屏蔽
Integrated Inductor
Quality factor
Differential symmetry
Tapered metal width
PGS
