摘要
研究了在不同的温度和偏置条件下对SIMOX SOI MOSFET进行总剂量辐照的退火特性。结果发现,ON偏置时退火效应较显著,且高温时退火效应比常温时更明显。
Effects of annealing on SIMOX SOI MOSFET by total-dose irradiation at different temperatures and bias conditions were investigated.It has been demonstrated that the annealing effect was more remarkable with ON bias than with other biases,and more obvious at high temperature than at room temperature.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第1期111-114,共4页
Microelectronics
基金
"十二.五"微电子预研项目(51308040403)
"十二.五"国家重大专项(2011ZX01022002)
