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溶液法制备CdZnTe晶体中Te夹杂相分析 被引量：4

Analysis of Te Inclusions in CdZnTe Crystal Growth from Solution
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摘要 利用红外(infrared,IR)显微镜、腐蚀坑形貌及傅里叶红外(Fourier transform infrared,FTIR)光谱仪观察研究溶液法制备CdZnTe晶体中的Te夹杂相.讨论CdZnTe晶锭中Te夹杂相的分布和原因,及其对晶体中位错密度(etch pitdensity,EPD)和红外透过率的影响.实验结果表明:沿生长轴方向,Te夹杂相密度增大,相应的位错密度也增大;红外透过率随Te夹杂相密度的增大而减小,生长末端晶体的透过率低至45%. Te inclusions in CdZnTe crystals grown from solution has been investigated with transmission infrared （IR） microscopy, photography of etch pits and Fourier transform infrared （FTIR） transmission spectroscopy. Distri- bution and origination of Te inclusions in CdZnTe crystals are discussed, and the influence on the etch pit density （EPD） and IR transmittance are analyzed. The experimental results show that the density of Te inclusions increases along the growth direction, while the EPD increases. IR transmission decreases as the density of Te inclusions increases. The crystal in tail ingot has low transmittance of about 45%.
作者 王东 闵嘉华 梁小燕 孙孝翔 刘伟伟 张继军 王林军
机构地区 上海大学材料科学与工程学院
出处 《上海大学学报（自然科学版）》 CAS CSCD 北大核心 2013年第1期67-70,共4页 Journal of Shanghai University:Natural Science Edition
基金 国家自然科学基金资助项目(50902091) 上海市重点学科建设资助项目(S30107) 上海市科委重点资助项目(11530500200) 上海市教委科研创新资助项目(12ZZ096)
关键词 碲锌镉 Te夹杂 位错 红外透过率 CdZnTe Te inclusion dislocation infrared （IR） transmittance
分类号 TN304 [电子电信—物理电子学]
  • 相关文献

参考文献12

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二级参考文献49

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共引文献3

同被引文献32

  • 1汪晓芹,介万奇,杨戈.CdZnT e晶片表面化学抛光研究[J].人工晶体学报,2005,34(5):790-793. 被引量：6
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引证文献4

二级引证文献3

上海大学学报（自然科学版）
2013年 第1期

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