摘要
推导出红外探测温度与真实温度之间的关系.通过确定合适的发射率修正方法,得到了IG-BT芯片的真实温度分布,得出芯片中心温度高于边缘温度,纠正了以往对该问题的错误认识,通过发射率修正和实验数据验证了该结论的正确性.
The theory on detecting temperature with infrared thermal imaging system is discussed in detail.The relationship between infrared acquisition temperature and real temperature is deduced.By selecting an appropriate emissivity modification method,the real temperature distribution of IGBT chip is detected,and the conclusion that the center temperature is higher than the vicinity is presented.Therefore,the former inaccurate viewpoint is rectified and it is proved by the emissivity modification and integrated experiment data.It can be significant for the investigation on IGBT failure mechanism and analysis of reliability.
出处
《武汉理工大学学报（交通科学与工程版）》
2013年第1期144-148,共5页
Journal of Wuhan University of Technology（Transportation Science & Engineering）
基金
国家自然科学基金重点项目资助(批准号:50737004)
关键词
IGBT芯片
红外热成像
温度分布
发射率修正
IGBT chip
infrared thermal imaging system
temperature distribution
emissivity modification
