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Surface plasmon-enhanced amorphous-silicon-nitride light emission with single-layer gold waveguides 被引量:1

Surface plasmon-enhanced amorphous-silicon-nitride light emission with single-layer gold waveguides
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摘要 Surface-plasmon (SP) enhancement of amorphous-silicon-nitride (a-SiNx) light emission with single-layer gold (Au) waveguides is experimentally demonstrated through time-resolved photoluminescence measure- ment. The a-SiN~ active layer with strong steady-state photoluminescence at 560 nm is prepared by plasma-enhanced chemical vapor deposition, and ricated by magnetron sputtering. The maximum the Au waveguide on the top of the a-SiNx layer is lab- Purcell factor value of -3 is achieved with identified SP resonance of the Au waveguide at -530 nm. Surface-plasmon (SP) enhancement of amorphous-silicon-nitride (a-SiNx) light emission with single-layer gold (Au) waveguides is experimentally demonstrated through time-resolved photoluminescence measure- ment. The a-SiN~ active layer with strong steady-state photoluminescence at 560 nm is prepared by plasma-enhanced chemical vapor deposition, and ricated by magnetron sputtering. The maximum the Au waveguide on the top of the a-SiNx layer is lab- Purcell factor value of -3 is achieved with identified SP resonance of the Au waveguide at -530 nm.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2013年第2期88-90,共3页 中国光学快报(英文版)
基金 supported by the National Basic Research Program of China(Nos.2011CBA00608 and 2011CBA00303) the National Natural Science Foundation of China(Nos.61036011 and 61036010)
关键词 GOLD Light emission Photoluminescence Plasma enhanced chemical vapor deposition PLASMONS Silicon Silicon nitride WAVEGUIDES Gold Light emission Photoluminescence Plasma enhanced chemical vapor deposition Plasmons Silicon Silicon nitride Waveguides
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