纳米V_2O_5的晶体缺陷与导电性能研究

Defect and Electrical Properties of Nanocrystalline V_2O_5

用溶胶一凝胶法制备纳米Ｖ２Ｏ５粉体，利用ＩＲ、ＥＳＲ结构分析手段研究晶体缺陷，并用阻抗谱研究它的导电性能。阻抗谱表明，在较低退火温度下得到的纳米Ｖ２Ｏ５粉体（平均粒径为５． ０ｎｍ）表现出超常的导电性能，其电导率高于其它样品 二个数量级。ＩＲ、ＥＳＲ分析指出，该样品中Ｖ２Ｏ５结构发生严重畸变，引起氧空位浓度增加，并认为是导致良好导电性能之主要原因。

The nanocrystalline V2O5 powders were prepared by the sol- gel method. It was investigated by IR. ESR and impedance spectroscopy. The impedance spectroscopy shows the nanocrystalline V2 O5 (l # ) exhibits a good electrical property, whose conductivi ty is more than 2 orders of magnitude greater than other samples. And IR and ESR have proved that it has higher density of oxygen vacancy, which results mainly in its good electrical property.