摘要
综合叙述了功率半导体开关在高重复频率脉冲功率技术中的意义和使用方法。并通过与传统脉冲功率开关的比较,归纳了半导体开关的特长和缺陷。在举例说明了半导体开关的控制方法以后,介绍了几种有效提高半导体开关工作能力的电路方法,包括采用多个器件的串联与并联、电压叠加、开关器件的组合与互补等方法。
Power semiconductor devices have been used for repetitive pulsed power generation, due to their advantages in stability, reliability, and lifetime. On the other hand, their limitations in power capability and noise vulnerability are expected to be overcome by using various techniques in gate control and circuit configuration. In this paper, some pulse circuit methods to im- prove the working ability of semiconductor switches are introduced, including using a number of devices in series and parallel, voltage superposition, combination and complementation of switching devices.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2013年第3期537-543,共7页
High Power Laser and Particle Beams
基金
国家自然科学基金重点项目(50837004)
关键词
脉冲功率
高电压
短脉冲
高功率脉冲开关
电力电子
气体放电
pulsed power
high voltage
short pulse
high-power pulsed switch
power electronics
gas discharge