期刊文献+

高重复频率脉冲功率技术及其应用:(4)半导体开关的特长与局限性 被引量:21

Repetition rate pulsed power technology and its applications:(iv) Advantage and limitation of semiconductor switches
下载PDF
导出
摘要 综合叙述了功率半导体开关在高重复频率脉冲功率技术中的意义和使用方法。并通过与传统脉冲功率开关的比较,归纳了半导体开关的特长和缺陷。在举例说明了半导体开关的控制方法以后,介绍了几种有效提高半导体开关工作能力的电路方法,包括采用多个器件的串联与并联、电压叠加、开关器件的组合与互补等方法。 Power semiconductor devices have been used for repetitive pulsed power generation, due to their advantages in stability, reliability, and lifetime. On the other hand, their limitations in power capability and noise vulnerability are expected to be overcome by using various techniques in gate control and circuit configuration. In this paper, some pulse circuit methods to im- prove the working ability of semiconductor switches are introduced, including using a number of devices in series and parallel, voltage superposition, combination and complementation of switching devices.
作者 江伟华
机构地区 清华大学电机系
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2013年第3期537-543,共7页 High Power Laser and Particle Beams
基金 国家自然科学基金重点项目(50837004)
关键词 脉冲功率 高电压 短脉冲 高功率脉冲开关 电力电子 气体放电 pulsed power high voltage short pulse high-power pulsed switch power electronics gas discharge
  • 相关文献

参考文献7

  • 1余岳辉;梁琳.脉冲功率器件及其应用[M]北京:机械工业出版社,2010.
  • 2Jiang Weihua,Yatsui K,Takayama K. Compact solid state switched pulsed power and its applications[J].Proceedings of the IEEE,2004,(07):1180-1196.
  • 3江伟华.高重复频率脉冲功率技术及其应用:(1)概述[J].强激光与粒子束,2012,24(1):10-15. 被引量:39
  • 4刁文豪,江伟华,王新新.基于金属氧化物半导体场效应管的Marx发生器[J].强激光与粒子束,2010,22(3):565-568. 被引量:2
  • 5Jiang Weihua. Fast high-voltage switching using stacked MOSFETs[J].IEEE Transactions on Dielectrics and Electrical Insulation,2007,(04):947-950.
  • 6Kim J H,Min B D,Shenderey S. High voltage Marx generator implementation using IGBT stacks[J].IEEE Transactions on Dielectrics and Electrical Insulation,2007,(04):931-936.doi:10.1109/TDEI.2007.4286528.
  • 7Qiu Jian,Liu Kefu,Wu Yifan. A pulsed power supply based on power semiconductor switches and transmission line transformer[J].IEEE Transactions on Dielectrics and Electrical Insulation,2007,(04):927-930.

二级参考文献14

  • 1孟志鹏,张自成,杨汉武,钱宝良.Applications of Semiconductor Switches in Pulsed Power Technology[J].Chinese Physics C,2008,32(z1):277-279. 被引量:19
  • 2Neau E L. Environmental and industrial applications of pulsed power systems[J]. IEEE Trans on Plasma Science, 1994, 22:2-10.
  • 3Jiang W, Yatsui K, Takayama K, et al. Compact solid state-switched pulsed power and its applications[J]. Proc of the IEEE, 2004, 92 (7) : 1180-1196.
  • 4Akiyama H, Sakugawa T, Namihira T, et al. Industrial applications of pulsed power technology[J]. IEEE Trans on Dielectrics and Electrical Insulation, 2007, 14(5) : 1051-1064.
  • 5Mankowski J, Kristiansen M. A review of short pulse generator technology[J].IEEE Trans on Plasma Science, 2000, 28(1):102-108.
  • 6Buttram M. Some future directions for repetitive pulsed power[J]. IEEE Trans on Plasma Science, 2002, 30(1) :262-266.
  • 7Ogawa K, Sasago M, Endo M, et al. A KrF excimer laser lithography for half micron devices[J].J pn J Appl Phys, 1988, 27(8):1521-1525.
  • 8Kakizaki K, Sasaki Y, Inoue T, et al. High-repetition-rate (6 kHz) and long-pulse-duration (50 ns) ArF excimer laser for sub-65 nm lithography[J]. Review of Scientific Instruments, 2006, 77:035109.
  • 9Nagai S, Takehisa K, Enami T, et al. Development of a 2 kHz Fz laser for 157 nm lithography[J]. Jpn J Appl Phys, 1999, 38(12B); 7013-7016.
  • 10Wood O. Extreme ultraviolet lithography development in the United States[J]. Jpn J Appl Phys, 2006, 45(6B) :5349-5353.

共引文献39

同被引文献170

引证文献21

二级引证文献65

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部