注氘纯钒中位错环的原位观察

Evolution of Dislocation Loops in Deuterium-ion Implanted Vanadium Under Electron Irradiation

研究了室温注氘纯钒在电子辐照下位错环的变化。纯钒室温注氘后分别在500,550℃通过超高压透射电子显微镜(HVEM)观察分析了在电子辐照下的微观结构变化。结果表明:500℃电子辐照时,位错环没有明显的变化;在550℃时效后形成的位错环尺寸比500℃略有增加,在550℃继续进行电子辐照,位错环在尺寸和密度上同样没有变化。与纯铁相比,纯钒中的缺陷团簇在辐照下的稳定性更高。

The evolution of dislocation loops in deuterium-ion implanted pure vanadium under electron irradiation was investigated. Pure vanadium implanted by deuterium ions at room temperature was ir- radiated by electrons using High Voltage Electron Microscope （HVEM） at 500℃ and 550℃, respec- tively. Under electron irradiation at 500℃ the dislocation loops remained essentially the same size. The size of dislocation loops formed by aging at 550℃ was a little larger than that formed by aging at 500℃. However, the dislocation loops also showed no change under electron irradiation at 550℃. Va- nadium has greater stability of defect clusters under irradiation than iron.