摘要
采用射频磁控溅射法用Ta作为缓冲层,在集成电路晶元上制备NiFe薄膜,并研究分析了Ta缓冲层厚度以及Ta缓冲层溅射功率对NiFe磁阻薄膜性能的影响,通过测试结果可以得到,当溅射功率由小变大时,NiFe薄膜的磁阻值也由小变到大。当Ta层的厚度在5nm左右时,NiFe更容易形成(111)织构,这时其磁阻值也最大。利用优化后的工艺,在晶元上制备NiFe薄膜,测试结果显示出开关特性,其开关场分别在398和796A/m左右。
In this paper,radio frequency and DC magnetron sputtering were used to prepare NiFe thin-film.The influence of the thickness of Ta buffer layer and the sputtering power of the NiFe thin-film were investigated.Results show that increase of the sputtering power can increase the MR of the NiFe film which is resulted from the enhanced（111） texture of the NiFe film.Lift-off procedures were used to fabricate the MR resistance bridge onto wafers.The chips show magnetic switch between at 398 and 796A/m.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2013年第4期577-580,共4页
Journal of Functional Materials
基金
四川省科技支撑计划资助项目(2011GZ0118)
关键词
各向异性磁阻
NiFe薄膜
缓冲层
磁阻开关
anisotropic magnetoresistance effect
NiFe thin film
Ta buffer layer
magnetic switch
