摘要
本文运用电荷控制分析方法 ,提出了GaAsMESFET以电荷源为基本组成元件的大信号非线性动态模型 .该模型在解决了电荷不守恒问题以及DC与RF电流不一致性问题的同时 ,结合器件的温度特性与自升温效应 。
This paper presents a nonlinear dynamic large signal model for GaAs MESFETs with charge sources as elements by way of charge control methodology.Besides solving the problems of charge non conservation and current non consistency under DC and RF conditions,the model realizes the quasi two dimensional dynamic analysis considering the temperature characteristics and self heating effect.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第8期143-144,F003,共3页
Acta Electronica Sinica
关键词
大信号模型
准二维分析
砷化镓
MESFET
large-signal model
charge-control methodology
self-heating effect
quasi-two dimensional analysis