摘要
以氮化镓为代表的第三代直接带隙半导体材料具有宽禁带、高发光效率、高电子漂移饱和速度、高热导率、高耐温性、强抗辐射和稳定的化学性质等优点，在当代微电子、光电子领域得到了广泛的应用。然而，高质量P型氮化镓材料难以获取，阻碍了氮化镓材料的进一步发展。文章就近年来P型氮化镓掺杂机制和制备技术方面的发展状况进行综述。
As the representative of the third generation semiconductor material, Gallium Nitride （GaN） has great advantages, such as direct and large band-gap, high luminous efficiency, high electronic drift saturated speed, high thermal conductivity, high temperature resistant, radiation hardening and Chemically inactive, which has been widely applied in microelectronic and optoelectronic field. However, it is difficult to obtaining the high grade p-type doped GaN, which will hinder the further development of GaN materials. In this paper, the doping mechanism and preparation technology of GaN materials are reviewed.
关键词
GAN材料
掺杂
激活
热退火
GaN materials
doping
activation
thermal annealing
