摘要
表观正阻是RTDI-V特性上峰值电压VP大于谷值电压VV的现象。以前的观念认为它来源于RTD和其负载电阻RL构成的锁定单元,但未阐明负载电阻产生的物理过程。对表观正阻现象产生的物理机制进行了更进一步的研究,发现了RTD串联电阻增大时形成RL/RTD锁定单元的物理过程,为建立APR的物理模型奠定了基础。
The apparent positive resistance is a phenomenon that peak voltage Vp is larger than valley voltage Vv in I-V characteristic in RTD. Previous concept considers that the origin of APR is attributed to the latch element constructed by RTD and its load resistance RL. But this concept does not explain the physical process of formation of this load resistance. This paper has made a further investigation of physical mechanism of generation of apparent resistance in RTD and found the physical process on formation of RJRTD latch element as series resistance in RTD increasing. This work has made a foundation on establishing a physical model of APR creation.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2013年第1期6-10,41,共6页
Research & Progress of SSE
