摘要
采用76.2mm(3英寸)GaAs PIN二极管工艺设计和制作了大功率毫米波单刀双掷开关单片。采用并联结构的单刀双掷开关以获得较高的功率特性。在片测试表明,在30～36GHz工作频段,开关导通支路插损1.0dB,驻波优于1.5,开关关断端口隔离度大于34dB。开关在导通态下输入功率0.5dB压缩点P-0.5 dB大于5W。
A high power millimeter wave single-pole double-through（SPDT） switch MMIC is designed and fabricated using 76.2 mm （3 inch） wafer GaAs PIN technology. By using shunt SPDT switch configuration, high power performance can be obtained. Over the 30 to 36 GHz op- erating bandwidth for on-chip measurement the path in ON state appears less than 1.0 dB inser- tion toss and better than 1.5 VSWR. The path in OFF state appears large than 34 dB isolation. In ON state,the input power for this switch at 0.5 dB compression point is higher than 5 W.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2013年第1期37-41,共5页
Research & Progress of SSE
