气体法掺硼制备双面金刚石电极的研究

Research on the Preparation of Double-sided Diamond Coated Electrode with Gas Doping of Boron

本文根据制备双面电极所要的温度场流场需求,设计了一个悬挂式的沉积平台,以满足工业级金刚石电极的制备需要。利用B2H6气体掺杂的方法制备不同掺杂浓度的金刚石电极,用SEM、Raman、四探针电阻仪对掺杂金刚石膜进行了分析,同时对制成的电极做了电化学性能的测试。结果表明,在设计的平台上可以制备出高质量的金刚石薄膜,B掺杂对金刚石膜的成分结构影响比较大,随着掺杂浓度的提高,晶粒细化明显,掺杂浓度过高薄膜质量下降。电化学性能的检测表明,气体掺杂的效率比较明显,在2000～4000 ppm较低浓度下,电极已经表现出良好的电化学性能。

A suspended deposition platform was created according to the requirements of the temperature and flow. The diamond were prepared with different concentration of B2H6, and were investigated by Raman scattering spectroscopy （Raman）, scanning electron micrograph （SEM） and four-pro be resistance meter, the electrochemical properties were also researched meanwhile. The results showed that a high-quality diamond film can be prepared in the platform, and the B atom has a obvious effect on the micro structure of the diamond. With the doping concentration increased, the grains were smashed more obviously and the film quality was reduced with a high boron concentration. The electrochemical experimental results showed that the doping way with gas was efficient and the electrode prepared under the concentration of 2000-4000 ppm had a remarkable electrochemical performance.